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| STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3TM Power MOSFET Features Type STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 VDSS 525 V 525 V 525 V 525 V RDS(on) max < 0.98 < 0.98 < 0.98 < 0.98 ID 6.2 A 6.2 A 6.2 A (1) 6.2 A Pw 3 3 90 W 90 W 25 W 90 W 1 1 DPAK DPAK 1. Limited by package 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. TO-220 1 3 2 3 1 2 TO-220FP Internal schematic diagram D(2) Application Switching applications G(1) Description SuperMESH3TM is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics' SuperMESHTM technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Marking 7N52K3 7N52K3 7N52K3 7N52K3 Doc ID 14896 Rev 2 Package DPAK DPAK TO-220FP TO-220 Packaging Tape and reel Tape and reel Tube Tube 1/18 www.st.com 18 S(3) AM01476v1 Order codes STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 September 2009 Contents STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 DPAK DPAK TO-220FP Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V) Gate source ESD(HBM-C = 100 pF, R = 1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Storage temperature Max. operating junction temperature -55 to 150 150 6.2 4.5 24.8 90 6.2 100 2500 12 2500 525 30 6.2 (1) 4.5 24.8 25 (1) (1) Unit V V A A A W A mJ V V/ns V C C PTOT IAR EAS VESD(G-S) dv/dt (3) VISO Tstg Tj 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS. Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Value Parameter TO-220 DPAK DPAK TO-220FP Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 300 1.39 50 30 62.5 5 C/W C/W C/W C Unit Doc ID 14896 Rev 2 3/18 Electrical characteristics STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 2 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 525 1 50 10 3 3.75 0.84 4.5 0.98 Typ. Max. Unit V A A A V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V Gate threshold voltage VDS = VGS, ID = 50 A Static drain-source on resistance VGS = 10 V, ID = 3.1 A Table 5. Symbol Ciss Coss Crss Co(tr)(1) Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge VDS = 0 to 520 V, VGS = 0 126 pF Test conditions Min. Typ. 737 110 10 Max. Unit pF pF pF VDS = 100 V, f = 1 MHz, VGS = 0 - - - 198 - pF Co(er)(2) RG Qg Qgs Qgd f = 1 MHz open drain VDD = 420 V, ID = 6 A, VGS = 10 V (see Figure 20) - 4 34 4.4 15 - nC nC nC - - 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 260 V, ID = 3 A, RG = 4.7 , VGS = 10 V (see Figure 19) Min. Typ. 11 22 30 22 Max Unit ns ns ns ns - - Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, VGS = 0 ISD = 6 A, di/dt = 100 A/s VDD = 60 V (see Figure 24) ISD = 6 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 24) Test conditions Min. 260 1 11 338 1.4 13 Typ. Max. Unit 6.2 24.8 1.5 A A V ns nC A ns nC A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 8. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 1 mA (open drain) Min. 30 Typ. Max. Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components Doc ID 14896 Rev 2 5/18 Electrical characteristics STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area for TO-220, DPAK AM04999v1 Tj=150C Tc=25C Sinlge pulse Figure 3. Thermal impedance for TO-220, DPAK 10 a 10s ) Op Lim era ite tion d by in th m is ax ar Re DS ( on is 100s 1ms 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. ID (A) Safe operating area for DPAK AM04997v1 Tj=150C Tc=25C Sinlge pulse Figure 5. Thermal impedance for DPAK 10s Op Lim era ite tion d by in th m is ax ar R ea (o n) DS is 10 100s 1 1ms 10ms 0.1 0.1 1 10 100 VDS(V) Figure 6. ID (A) Safe operating area for TO-220FP AM04998v1 Tj=150C Tc=25C Sinlge pulse Figure 7. Thermal impedance for TO-220FP 10 pe ra ite tio d ni by n m this ax a R rea is S( on ) 1 10s 100s 1ms 10ms O 0.1 0.01 0.1 Li m D 1 10 100 VDS(V) 6/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Figure 8. ID (A) 5 4 3 6V 2 1 5V 0 0 2 4 VDS(V) 1 0 0 2 4 4 3 2 Electrical characteristics Transfer characteristics AM05401v1 Output characteristics AM05000v1 Figure 9. ID (A) 8 7 6 5 VGS=10V 6 8 VGS(V) Figure 10. Normalized BVDSS vs temperature BVDSS (norm) 1.10 AM05402v1 Figure 11. Static drain-source on resistance RDS(on) () 0.95 0.90 ID=3.1A VGS=10V AM05403v1 1.05 0.85 1.00 0.80 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ(C) 0.75 0.70 0 1 2 3 4 5 6 ID(A) Figure 12. Output capacitance stored energy Eoss (J) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 VDS(V) AM05405v1 Figure 13. Capacitance variations C (pF) AM05404v1 1000 Ciss 100 Coss Crss 10 1 0.1 1 10 100 VDS(V) Doc ID 14896 Rev 2 7/18 Electrical characteristics STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs temperature VGS (V) 12 10 8 6 4 100 2 0 0 5 10 15 20 25 30 35 50 0 Qg(nC) 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ(C) AM05406v1 VDS VDD=420V ID=6A VGS RDS(on) (norm) 2.5 AM05408v1 400 350 300 250 200 150 1.5 1.0 2.0 Figure 16. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.10 AM05407v1 Figure 17. Maximum avalanche energy vs temperature EAS (mJ) 100 90 80 70 60 ID=6.2 A VDD=50 V AM05409v1 1.00 0.90 50 40 30 20 10 0 0 0.80 0.70 -50 -25 0 25 50 75 100 125 150 TJ(C) 20 40 60 80 100 120 140 TJ(C) Figure 18. Source-drain diode forward characteristics VSD (V) 0.9 0.8 0.7 0.6 0.5 TJ=150C 0.4 0.3 0 1 2 3 4 5 6 7 8 ISD(A) AM05410v1 TJ=-50C TJ=25C 8/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Test circuits 3 Test circuits Figure 20. Gate charge test circuit VDD 12V 2200 Figure 19. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform V(BR)DSS VD Figure 24. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 14896 Rev 2 9/18 Package mechanical data STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 Doc ID 14896 Rev 2 11/18 Package mechanical data STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 E L2 L5 123 L4 7012510-I 12/18 Doc ID 14896 Rev 2 G STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Package mechanical data DPAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M Doc ID 14896 Rev 2 13/18 Package mechanical data STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 14/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Package mechanical data 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 Doc ID 14896 Rev 2 15/18 Package mechanical data STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 16/18 Doc ID 14896 Rev 2 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Revision history 6 Revision history Table 9. Date 07-Jul-2008 10-Sep-2009 Document revision history Revision 1 2 First release Document status promoted from preliminary data to datasheet. Changes Doc ID 14896 Rev 2 17/18 STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 Doc ID 14896 Rev 2 |
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